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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: behavior of the as-implanted dopant

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: behavior of the as-implanted dopant

Categories Publications
Year 2015
Authors V. Vishwanath, E. Demenev, D. Giubertoni, L. Vanzetti, A. L. Koh, G. Steinhauser, G. Pepponi, M. Bersani, F. Meirer, M. Foad
Published In Applied Surface Science 355 (2015) 792-799
DOI 10.1016/j.apsusc.2015.07.068